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SMD Type
HEXFET Power MOSFET KRF7105
Features
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 dv/dt VGS TJ, TSTG R
JA
Symbol ID ID IDM
N-Channel 3.5 2.8 14 2.0 0.016 3.0 20
P-Channel -2.3 -1.8 -10
Unit
A
@Tc= 25
PD
W W/ -3.0 V/ ns V
-55 to + 150 62.5 /W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 3.5A, di/dt -2.3A, di/dt 90A/ 90A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150
*3 Surface mounted on FR-4 board, t
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SMD Type
KRF7105
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 1.0A*1 VGS = 4.5V, ID = 0.5A*1 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.50A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 3.5A*1 VDS = -15V, ID = -3.5A*1 VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 VDS = -20V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -2.3A,VDS = -12.5V,VGS = -10V *1 N-Channel VDD = 25V,ID = 1.0A,RG = 6.0 RD = 25 P-Channel VDD = -25V,ID = -1.0A,RG = 6.0 RD = 25 1*1 *1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Between lead,6mm(0.25in.)from packing and center of die contact N-Channel VGS = 0V,VDS = 15V,f = 1.0MHz *1 P-Channel VGS = 0V,VDS = -15V,f = 1.0MHz *1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Min 25 -20
Typ
Max
Unit V
0.030 -0.015 0.083 0.10 0.14 0.16 0.30 1.0 -1.0 4.3 3.1 2.0 -2.0 25 -25 100 100 9.4 10 1.7 1.9 3.1 2.8 7.0 12 9.0 13 45 45 25 37 4.0 4.0 6.0 6.0 330 290 250 210 61 67 27 25 0.16 0.25 0.40 3.0 -3.0
TJ
V/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage Forward Transconductance
VGS(th) gfs
V S
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
VGS =
20V
nA
N-Channel ID =2.3A,VDS = 12.5V,VGS =10V *1
nC
ns
nH
pF
2
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SMD Type
KRF7105
Electrical Characteristics Ta = 25
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr ton TJ = 25 , IS = 1.3A, VGS = 0V*1 TJ = 25 , IS = -1.3A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.3A,di/dt = 100A/ P-Channel TJ=25 ,IF=-1.3A,di/dt=-100A/ s*1 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 36 69 41 90 Min Typ Max 2.0 -2.0 14 -9.2 1.2 -1.2 54 100 75 180
IC IC
Unit
A
Body Diode) *2
V ns nC
*2 Repetitive rating; pulse width limited by max. junction temperature.
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